 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| VN16BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY TYPE VN16BSP s V DSS 40 V R DS(on ) 0.06 I OUT 5.6 A V CC 26 V s s s s s s MAXIMUM CONTINUOUS OUTPUT CURRENT :20A @ Tc = 85oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT INDUCTIVE LOAD FAST DEMAGNETIZATION VERY LOW STAND-BY POWER DISSIPATION 10 1 PowerSO-10 DESCRIPTION The VN16BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The open drain diagnostic output indicates: open load in off state and in on state, output shorted to VCC and overtemperature. BLOCK DIAGRAM Fast demagnetization of inductive loads is archivied by negative (-18V) load voltage at turn-off March 1998 1/9 VN16BSP ABSOLUTE MAXIMUM RATING Symbol V (BR)DSS I OUT IR I IN -V CC I STAT V ESD P tot Tj T stg Parameter Drain-Source Breakdown Voltage Output Current (cont.) at T c = 85 o C o Value 40 20 20 Unit V A A A mA V mA V W o o I OUT (RMS) RMS Output Current at T c = 85 C Reverse Output Current at T c = 85 C (f > 1Hz) Input Current Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k, 100 pF) Power Dissipation at T c = 25 C Junction Operating Temperature Storage Temperature o o -20 10 -4 10 2000 82 -40 to 150 -55 to 150 C C CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/9 VN16BSP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient ($) Max Max 1.5 50 o o C/W C/W ($) When mounted using minimum recommended pad size on FR-4 board ELECTRICAL CHARACTERISTICS (8 < VCC < 16 V; -40 Tj 125 oC unless otherwise specified) POWER Symbol VCC In(*) R on IS V DS(MAX) Ri Parameter Supply Voltage Nominal Current On State Resistance Supply Current T c = 85 C V DS(on) 0.5 V CC = 13 V I OUT = In Off State V CC = 13 V V CC = 13 V T j = 25 C T j 25 o C o o o Test Conditions Min. 6 5.6 0.038 Typ. 13 Max. 26 8.8 0.06 Unit V A A V K 25 1 5 10 50 1.8 20 Maximum Voltage Drop I OUT = 20 A Output to GND Internal T j = 25 o C Impedance V CC = 13 V T c = 85 C SWITCHING Symbol t d(on) (^) t r (^) t d(off) (^) tf (^) (di/dt) on (di/dt) off V demag Parameter Turn-on Delay Time Of Output Current Rise Time Of Output Current Turn-off Delay Time Of Output Current Fall Time Of Output Current Turn-on Current Slope Turn-off Current Slope Inductive Load Clamp Voltage Test Conditions R load = 1.6 R load = 1.6 R load = 1.6 R load = 1.6 R load = 1.6 R load = 1.6 R load = 1.6 V CC = 13 V V CC = 13 V L = 1 mH Min. 5 40 10 40 0.008 0.008 -24 -18 Typ. 50 100 100 100 Max. 500 680 500 680 0.1 0.1 -14 Unit s s s s A/s A/s V LOGIC INPUT Symbol V IL VIH V I(hyst.) I IN V ICL Parameter Input Low Level Voltage Input High Level Voltage Input Hysteresis Voltage Input Current Input Clamp Voltage V IN = 5 V I IN = 10 mA I IN = -10 mA T j = 25 o C 5 6 -0.7 3.5 0.2 1 Test Conditions Min. Typ. Max. 1.5 (*) 1.5 100 7 Unit V V V A V V 3/9 VN16BSP ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (continued) Symbol V STAT V USD V SCL T TSD T SD(hyst.) TR V OL I OL t povl t pol Parameter Status Voltage Output Low Under Voltage Shut Down Status Clamp Voltage Thermal Shut-down Temperature Thermal Shut-down Hysteresis Reset Temperature Open Voltage Level Open Load Current Level Status Delay Status Delay Off-State (note 2) On-State (note 3) (note 3) 50 125 2.5 0.15 5 400 3.8 5 0.85 10 2500 I STAT = 10 mA I STAT = -10 mA Test Conditions I STAT = 1.6 mA 3.5 5 140 5 6 -0.7 160 15 Min. Typ. Max. 0.4 6 7 180 50 Unit V V V V o C C C o o V A s s (*) In= Nominal current according to ISO definition for high side automotive switch (see note 1) (^) See Switchig Time Waveforms (*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. note 1: The Nominal Current is the current at Tc = 85 oC for battery voltage of 13V which produces a voltage drop of 0.5 V note 2: IOL(off) = (VCC -VOL)/ROL (see figure) note 3: tpovl tpol: ISO definition (see figure) Note 2 Relevant Figure Note 3 Relevant Figure 4/9 VN16BSP Switching Time Waveforms FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open load in on-state, open load in off-state, over temperature conditions and stuck-on to VCC. From the falling edge of the input signal, the status output, initially low to signal a fault condition (overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (tpovl) and in case of open open load (tpol) respectively. This feature allows to discriminate the nature of the detected fault. To protect the device against short circuit and over current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When this temperature returns to 125 oC the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor being located inside the Power MOS area. An internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (Vdemag) of -18V. This function allows to greatly reduces the power dissipation according to the formula: Pdem = 0.5 * Lload *(load)2 * [(VCC+Vdemag)/Vdemag] *f where f = switching frequency and Vdemag = demagnetization voltage. The maximum inductance which causes the chip temperature to reach the shut-down temperature in a specified thermal environment is a function of the load current for a fixed VCC, Vdemag and f according to the above formula. In this device if the GND pin is disconnected, with VCC not exceeding 16V, it will switch off. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig.3). The consequences of the voltage drop across this diode are as follows: If the input is pulled to power GND, a negative voltage of -Vf is seen by the device. (Vil, Vih thresholds and Vstat are increased by Vf with respect to power GND). The undervoltage shutdown level is increa- sed by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 3), which becomes the common signal GND for the whole control board avoiding shift of Vih, Vil and Vstat. This solution allows the use of a standard diode. 5/9 VN16BSP TRUTH TABLE INPUT Normal Operation Over-temperature Under-voltage Short load to V CC Open Load (#) With an additional external resistor OUTPUT L H L L H H H L DIAGNOSTIC H H L H L L L L (#) L H X X H L H L Figure 1: Waveforms 6/9 VN16BSP Figure 2: Over Current Test Circuit Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 7/9 VN16BSP Power SO-10 MECHANICAL DATA DIM. MIN. A A1 B c D D1 E E1 E2 E3 E4 e F H h L q 0o 1.20 1.70 8o 1.25 13.80 0.50 1.80 0.047 0.067 3.35 0.00 0.40 0.35 9.40 7.40 9.30 7.20 7.20 6.10 5.90 1.27 1.35 14.40 0.049 0.543 0.002 0.071 mm TYP. MAX. 3.65 0.10 0.60 0.55 9.60 7.60 9.50 7.40 7.60 6.35 6.10 MIN. 0.132 0.000 0.016 0.013 0.370 0.291 0.366 0.283 0.283 0.240 0.232 0.050 0.053 0.567 inch TYP. MAX. 0.144 0.004 0.024 0.022 0.378 0.300 0.374 0.291 0.300 0.250 0.240 B 0.10 A B 10 = = 6 = = H = E = = E2 E3 E1 = E4 = = A 1 5 = SEATING PLANE DETAIL "A" Q e 0.25 M B C D h = A F A1 = D1 = = SEATING PLANE = A1 L DETAIL "A" 0068039-C 8/9 VN16BSP Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 9/9 |
Price & Availability of VN06SP13TR
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |